BSS126 H6906

BSS126 SIPMOS® Small-Signal-Transistor Product Summary Features • N-channel • Depletion mode VDS 600 V RDS(on),max 700 Ω IDSS,min 0.007 A • dv /dt rated PG-SOT-23 • Available with VGS(th) indicator on reel • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 • Halogen-free according to IEC61249-2-21 Type Package Pb-free Tape and Reel Information Marking BSS126 PG-SOT-23 Yes H6327: 3000 pcs/reel SHs BSS126 PG-SOT-23 Yes H6906: 3000 pcs/reel sorted in VGS(th) bands 1)1) SHs Maximum ratings, at T j=25 °C, unless otherwise specified Value Unit T A=25 °C 0.021 A T A=70 °C 0.017 I D,pulse T A=25 °C 0.085 Reverse diode dv /dt dv /dt I D=0.016 A, V DS=20 V, di /dt =200 A/µs, T j,max=150 °C Gate source voltage V GS Parameter Symbol Conditions Continuous drain current ID Pulsed drain current ±20 ESD sensitivity (HBM) as per JESD22-A114 kV/µs V Class 0 (0 >250 V) Power dissipation P tot Operating and storage temperature T j, T stg T A=25 °C IEC climatic category; DIN IEC 68-1 1) 6 0.50 W -55 ... 150 °C 55/150/56 see table on next page and diagram 11 Rev. 2.1 page 1 2012-03-14 BSS126 Parameter Values Symbol Conditions Unit min. typ. max. - - 250 600 - - -2.7 -2.0 -1.6 Thermal characteristics Thermal resistance, junction - ambient R thJA minimal footprint K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=-5 V, I D=250 µA Gate threshold voltage V GS(th) V DS=3 V, I D=8 µA Drain-source cutoff current I D(off) V DS=600 V, V GS=-5 V, T j=25 °C - - 0.1 V DS=600 V, V GS=-5 V, T j=125 °C - - 10 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA On-state drain current I DSS V GS=0 V, V DS=25 V 7 - - mA Drain-source on-state resistance R DS(on) V GS=0 V, I D=3 mA - 320 700 V GS=10 V, I D=16 mA - 280 500 |V DS|>2|I D|R DS(on)max, I D=0.01 A 0.008 0.017 - S -1.8 - -1.6 V K -1.95 - -1.75 L -2.1 - -1.9 M -2.25 - -2.05 N -2.4 - -2.2 Transconductance g fs Ω Threshold voltage V GS(th) sorted in bands2) J 2) V GS(th) V DS=3 V, I D=8 µA Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific band cannot be ordered separately. Rev. 2.1 page 2 2012-03-14 BSS126 Parameter Values Symbol Conditions Unit min. typ. max. - 21 28 - 2.4 3.2 Dynamic characteristics I D=f(V GS); V DS=3 V; T j=25 °C C iss Output capacitance C oss Reverse transfer capacitance Crss - 1.0 1.5 Turn-on delay time t d(on) - 6.1 9.2 Rise time tr - 9.7 14.5 Turn-off delay time t d(off) - 14 21 Fall time tf - 115 170 Gate to source charge Q gs - 0.05 0.08 Gate to drain charge Q gd - 1.2 1.8 Gate charge total Qg - 1.4 2.1 Gate plateau voltage V plateau - 0.10 - V - - 0.016 A - - 0.064 - 0.81 1.2 V - 160 240 ns - 13.2 19.8 nC V GS=-5 V, V DS=25 V, f =1 MHz V DD=300 V, V GS=-3…7 V, I D=0.01 A, R G=6 Ω pF ns Gate Charge Characteristics V DD=400 V, I D=10 mA, V GS=-3 to 5 V nC Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Rev. 2.1 T A=25 °C V GS=-5 V, I F=16 mA, T j=25 °C V R=300 V, I F=0.01 A, di F/dt =100 A/µs page 3 2012-03-14 BSS126 1 Power dissipation 2 Drain current P tot=f(T A) I D=f(T A); V GS≥10 V 0.025 0.6 0.5 0.02 0.4 ID [A] Ptot [W] 0.015 0.3 0.01 0.2 0.005 0.1 0 0 0 40 80 120 0 160 40 80 TA [°C] 120 160 TA [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V GS); V DS=3 V; T j=25 °C Z thJA=f(t p) parameter: t p parameter: D =t p/T 10-1 103 10 µs limited by on-state resistance 100 µs 1 ms 10-2 ID [A] ZthJA [K/W] 10 ms 0.5 102 0.2 DC 0.1 10-3 0.05 0.02 0.01 10-4 101 100 101 102 103 VDS [V] Rev. 2.1 single pulse 10-4 10-3 10-2 10-1 100 101 102 tp [s] page 4 2012-03-14 BSS126 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 1000 0.04 10 V -0.2 V 0 V 0.1 V0.2 V -0.1 V 0.5 V 900 1V 0.5 V 800 0.2 V 700 0.03 RDS(on) [Ω] 0.1 V ID [A] 0V -0.1 V 0.02 -0.2 V 600 500 1V 400 10 V 300 0.01 200 100 0 0 0 4 8 12 0 16 0.01 VDS [V] 0.02 0.03 0.04 0.015 0.020 ID [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); V DS=3 V; T j=25 °C g fs=f(I D); T j=25 °C 0.025 0.02 0.02 0.015 0.015 ID [A] gfs [S] 0.025 0.01 0.01 0.005 0.005 0 -2 -1 0 1 VGS [V] Rev. 2.1 0 0.000 0.005 0.010 ID [A] page 5 2012-03-14 BSS126 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D= 0.016mA; V GS=0 V V GS(th)=f(T j); V DS=3 V; I D = 8 µA parameter: I D 1600 -1 1400 -1.5 1200 98 % typ -2 VGS(th) [V] RDS(on) [Ω] 1000 98 % 800 600 -2.5 2% 400 typ -3 200 0 -3.5 -60 -20 20 60 100 140 180 -60 -20 20 Tj [°C] 60 100 140 180 Tj [°C] 11 Threshold voltage bands 12 Typ. capacitances I D=f(V GS); V DS=3 V; T j=25 °C C =f(V DS); V GS=-3 V; f =1 MHz 0.1 100 Ciss 0.01 8 µA N M K L C [pF] ID [mA] 10 Coss J 1 Crss 0.001 -2.5 0.1 -2 -1.5 -1 VGS [V] Rev. 2.1 0 10 20 30 VDS [V] page 6 2012-03-14 BSS126 13 Forward characteristics of reverse diode 15 Typ. gate charge I F=f(V SD) V GS=f(Q gate); I D=0.1 A pulsed parameter: T j parameter: V DD 0.1 6 150 °C 0.2 VDS(max) 25 °C 0.5 VDS(max) 5 4 150 °C, 98% 0.8 VDS(max) 3 2 VGS [V] IF [A] 25 °C, 98% 0.01 1 0 -1 -2 -3 -4 0.001 0 0.5 1 1.5 2 2.5 0 0.4 0.8 1.2 1.6 Qgate [nC] VSD [V] 16 Drain-source breakdown voltage I D=f(V GS); V DS=3 V; T j=25 °C 700 VBR(DSS) [V] 660 620 580 540 500 -60 -20 20 60 100 140 180 Tj [°C] Rev. 2.1 page 7 2012-03-14 BSS126 Package Outline: Footprint: Packaging: Dimensions in mm Rev. 2.1 page 8 2012-03-14 BSS126 Rev. 2.1 page 9 2012-03-14